发明名称 |
POWER MOSFET IN SILICON CARBIDE |
摘要 |
The power metal oxide semiconductor field effect transistor (MOSFET) has a drain region, a channel region, and a source region formed of silicon carbide. The drain region has a substrate of silicon carbide of a first conductivity type and a drain-drift region of silicon carbide adjacent the substrate having the same conductivity type. The channel region is adjacent the drain-drift region and has the opposite conductivity type from the drain-drift region. The source region is adjacent the channel region and has the same conductivity type as the drain-drift region. The MOSFET has a gate region having a gate electrode formed on a first portion of the source region, a first portion of the channel region, and a first portion of the drain region. A source electrode is formed on a second portion of the source region and a second portion of the channel region. Also, a drain electrode is formed on a second portion of the drain region. |
申请公布号 |
WO9413017(A1) |
申请公布日期 |
1994.06.09 |
申请号 |
WO1993US10490 |
申请日期 |
1993.10.27 |
申请人 |
CREE RESEARCH, INC.;PALMOUR, JOHN, W. |
发明人 |
PALMOUR, JOHN, W. |
分类号 |
H01L29/12;H01L29/24;H01L29/78;(IPC1-7):H01L29/24;H01L29/784 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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