| 摘要 |
A semiconductor device includes a first layer (24), a first interconnection layer (25) formed on the first layer, at least one dummy pad (26, 61a) formed on the first layer in the vicinity of the first interconnection layer, a second layer (27) which is made of an insulator material and is formed on the first layer so as to cover the first interconnection layer and the dummy pad, and a second interconnection layer (29) formed on the second layer and electrically coupled to the first interconnection layer via a via hole (28) in the second layer. The dummy pad is provided in the vicinity of the via hole so that the second layer is approximately flat at least in the vicinity of the via hole, and the dummy pad is electrically isolated from the first and second interconnection layers. <IMAGE> |
