| 摘要 |
<p>A transistor (40) comprises a gate conductor (42) that includes a notch (62). The transistor (40) comprises a channel region (50) which has both a length and width dimension defined by the photolithographic patterning of gate conductor (42). The formation of bird's beak structures (76) and (78) associated with field oxide layer (72) and (74) will not affect the current carrying capability of the transistor (42). <IMAGE> <IMAGE></p> |
