Polysilicon-collector-on-insulator polysilicon-emitter bipolar

摘要

A bipolar transistor is described having a thin subcollector formed from alternating polycrystalline semiconductor material and silicide material disposed over an insulating layer. Because the subcollector is thin the transistor is less sensitive to alpha-particle events. The transistor has enhanced inverse current gain since there is a polycrystalline contact to the incerse emitter.