发明名称 |
Manufacturing method of thin film transistor |
摘要 |
A manufacturing method of a thin film transistor, wherein a laminated body consisting of an intrinsic amorphous silicon layer and a conductive amorphous silicon layer is formed on a glass substrate, and annealed at low temperatures not higher than 600 DEG C. thereby obtaining a polycrystalline silicon film. The conductive amorphous silicon layer gives girth to a core for polycrystallization, and therefore the intrinsic amorphous silicon layer is easily recrystallized by annealing at low temperatures.
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申请公布号 |
US5318919(A) |
申请公布日期 |
1994.06.07 |
申请号 |
US19910738201 |
申请日期 |
1991.07.30 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
NOGUCHI, SHIGERU;ISHIDA, SATOSHI;IWATA, HIROSHI;SANO, KEIICHI |
分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L29/04;H01L29/784 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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