发明名称 |
Method of patterning a phenolic polymer film without photoactive additive through exposure to high energy radiation below 225 nm with subsequent organometallic treatment and the associated imaged article |
摘要 |
A phenolic resist without photoadditives achieves enhanced sensitivity when exposed to patterned short wavelength radiation to form a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are readily removed by a oxygen RIE plasma. The laser exposure is a reciprocal process allowing precise control. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist.
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申请公布号 |
US5318870(A) |
申请公布日期 |
1994.06.07 |
申请号 |
US19920923864 |
申请日期 |
1992.07.31 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
HARTNEY, MARK A. |
分类号 |
G03F7/26;(IPC1-7):G03F7/36;G03F7/38 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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