| 摘要 |
<p>PURPOSE:To prevent boundary structure between a semiconductor layer and gate insulating film from being fluctuated by letting the lower layer wiring of a scanning line be plural island shape areas divided at a thin film transistor part. CONSTITUTION:The scanning line 1 and a signal line 2 are arranged in matrix shape on an insulating substrate, and a display screen electrode 4 is connected to the intersecting part of the lines via a thin film transistor TFT 3. The TFT 3 is formed on the right upper part of the scanning line 1. Also, the scanning line 1 is comprised of a first conductive layer 1a divided and formed in the plural island shape areas and a second conductive layer 1b covering them connected at every line while covering them with the TFT 3 part as a boundary. In such a case, since the scanning line is formed by only the second conductive layer 1b at the channel part of the TFT 3, the change of the boundary structure between the semiconductor layer and the gate insulating film due to the generation of a hillock in the first conductive layer 1a can be prevented.</p> |
