STARTING MATERIAL FOR CVD FOR THIN OXIDE DIELECTRIC FILM AND CAPACITOR FOR MEMORY

摘要

PURPOSE:To synthesize a thin dielectric film for a capacitor having satisfactory performance with high reproducibility by simultaneously vaporizing many compds. by dissolution in one solvent and stably transferring the resulting vapor to a reaction position. CONSTITUTION:Organometallic compds. can stably be vaporized by heating to a temp. below the conventional temp. by 30-100 deg.C without decomposing by dissolution in tetrahydrofuran and the resulting vapor can stably be transferred. As a result, a stable thin dielectric film is formed by CVD and this film is used for a capacitor for a memory.