| 摘要 |
<p>PURPOSE:To eliminate the uneven display when the positions where source and drain electrodes are formed deviate by disposing the capacity compensation electrodes connected to pixel electrodes opposite to the side edge parts on the thin-film transistor(TFT) side of auxiliary electrodes via an insulating film. CONSTITUTION:Respective gate lines Lg are provided with the auxiliary electrodes g' projecting to the projecting direction of gate electrodes g in correspondence respectively to the pixel electrode connecting side, i.e., source electrode s side of the respective TFTs 3 disposed along respective gate lines Lg. The capacity compensation electrodes s' respectively connected to the respective pixel electrodes 2R, 2G, 2B are formed opposite to the side edges on the TFT 3 side of the auxiliary electrodes g' via the insulating film (the gate insulating film of the TFTs 3) formed nearly over the entire surface of a substrate 1. The capacity compensation electrodes s' are formed integrally with the source electrodes s of the TFTs 3 in such a case. Namely, the capacity compensation electrodes s' are formed by extending the source electrodes s in their outside end direction.</p> |
