发明名称 Low drift resistor structure for amplifiers
摘要 A low drift integrated circuit resistor structure has a forced high end and a forced low end. A sense high connection is located proximate to the force high connection, and a sense low connection is located proximate to the force low connection. The structure also has at least one internal sense connection. This structure can be used in an instrumentation amplifier that includes an operational amplifier which regulates the current between the force high connection and the force low connection in response, in part, to the current sensed in the internal sensing connection of the resistor structure. The sense high connection and the sense low connection form the outputs of the instrumentation amplifier.
申请公布号 US5319319(A) 申请公布日期 1994.06.07
申请号 US19930018020 申请日期 1993.02.16
申请人 CRYSTAL SEMICONDUCTOR CORPORATION 发明人 KERTH, DONALD A.
分类号 H01L27/04;H01C7/22;H01L21/02;H01L21/822;H01L27/06;(IPC1-7):H03F3/68 主分类号 H01L27/04
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