| 摘要 |
<p>PURPOSE:To prevent the deterioration by the electrolytic corrosion of ITO and AI and to simplify the process by covering the gate lines with gate insulating films and providing gate terminals consisting of ITO via the contact of the gate insulating films. CONSTITUTION:The gate lines 53 are terminated just before the gate terminals 64 while these lines are held coated with the gate insulating films 56. The gate terminals 64 which are provided on the gate insulating films 56 and consist of the ITO and the gate line 53 are connected via contact holes 65 with Mo and Al. The gate terminals 64 are formed in the same stage as the stage for forming the display electrodes 57 and the contact of the gate lines 53 and the gate terminals 64 are formed simultaneously with the source and drain electrodes 62, 63 of transistors. The connecting electrodes 66 may be made of materials other than Mo and may be made of high melting metallic Ta, etc., capable of preventing electrolytic corrosion. The Mo is, however, used for connection of a-Si and the Al electrodes 62, 63 and, therefore, there is no need for deliberately using the materials other than the Mo.</p> |
