发明名称 Focused ion beam processing with charge control.
摘要 <p>Focused ion beam (FIB) systems are used for IC mask or reticle repair and imaging and other applications. The impinging ions can cause an undesirable charge build-up on the specimen. Prior to beginning repair operations in a FIB system, a fluid containing a conductive material such as dimethyl ammonium salt is applied to the reticle, mask or device and allowed to dry, leaving a thin conductive layer on the specimen. A leakage path is preferably provided from the thin conductive layer to ground, to prevent charge buildup on the specimen. The FIB is used to cut through the conductive layer before commencing FIB deposition, to assure proper bonding of the deposited material. The technique also has application with electron beam imaging systems. <IMAGE></p>
申请公布号 EP0599367(A1) 申请公布日期 1994.06.01
申请号 EP19930203055 申请日期 1993.11.02
申请人 SCHLUMBERGER TECHNOLOGIES, INC. 发明人 TALBOT, CHRISTOPHER G.;TREXLER, THOMAS M.
分类号 G03F1/74;G03F7/09;G03F7/20;H01L21/027;H01L21/302;H01L21/3065;(IPC1-7):G03F1/00;G03F7/11 主分类号 G03F1/74
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