| 摘要 |
<p>A semiconductor device formed at a substrate surface region is coated with a non-doped CVD silicon oxide film (110), and an planarized interlayer insulating film composed of a BPSG film (120), a first ozone-TEOS NSG film (130A) and a second ozone-TEOS NSG film (131) is formed on the silicon oxide film (110). The BPSG film (120) has a thickness of not less than 50 nm but not greater than 200 nm, and is heat-treated at a temperature of not lower than 700 DEG C but not higher than 800 DEG C. In addition, the first and second zone-TEOS NSG films (130A,131) are also heat-treated at a temperature of not lower than 700<0>C but not higher than 800<0>C. After the heat treatment the first ozone-TEOS NSG film (130) is planarized by the etch-back of a dummy layer (140) (e.g. SOG). <IMAGE></p> |
