| 摘要 |
<p>PURPOSE:To simplify a manufacturing process by a method wherein an insulating layer for selective polishing and a polycrystalline Si thin film are formed on an Si substrate and the polycrystalline silicon thin film, is patterned into an island shape and a TFT is formed on the island and a transparent insulating substrate is bonded to the TFT side and the Si substrate is removed and holes are drilled to form source and drain electrodes. CONSTITUTION:An insulating layer 2 for selective polishing is formed on an Si substrate 1 and a polycrystalline Si thin film 3 is formed on the insulating layer 2. The unnecessary part of the polycrystalline Si thin film 3 is removed to form the island shape Si thin film. Then a TFT containing source and drain regions 7 and 6 is formed on the island and a transparent insulating substrate 10 is bonded to the TFT side. Then, after the Si substrate 1 is removed by polishing and the insulating layer 2 for selective polishing, the TFT and the transparent insulating substrate 10 are left to form a thin structure, holes are drilled in the insulating layer 2 and source and drain electrodes 12 and 11 are formed so as to be brought into contact electrically with the source and drain layers 7 and 6. With this constitution, the manufacturing process can be simplified.</p> |
