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发明名称
Verfahren zur Bildung eines polykristallinen Halbleiterfilms durch das chemische Mikrowellen-Plasmaaufdampfverfahren
摘要
申请公布号
DE4013944(C2)
申请公布日期
1994.06.01
申请号
DE19904013944
申请日期
1990.04.30
申请人
CANON K.K., TOKIO/TOKYO
发明人
KAWAKAMI, SOICHIRO, HIKONE, SHIGA;KANAI, MASAHIRO, TOKIO/TOKYO;AOKI, TAKESHI, MACHIDA, TOKIO/TOKYO
分类号
H01L21/205;(IPC1-7):H01L21/205;C30B25/02;G09F9/35
主分类号
H01L21/205
代理机构
代理人
主权项
地址
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