Doping layer diffusion below semiconductor surface - inserting silicon@ crystals into closable container saturated by doping element for gas exchange

摘要

The doping layer is implanted into a depth of less than 200 nm below the semiconductor surface. The crystals are inserted into a closable container and saturated with a respective dopant. The container is of highly pure and refractory material, permitting a gas exchange. In the presence of a protective gas, the container, serving as a dopant source, is heated for a short time period. Pref. the container is of highly pure graphite, or poly- crystalline silicon. Radiation heating is typically applied to the container, pref. by laser radiation. Highly pure nitrogen is used as the protective gas. USE/ADVANTAGE - For forming pn-junction in semiconductors. Min. thermal stress for crystal vol.