发明名称 |
Non-volatile semiconductor memory cell |
摘要 |
Disclosed is a flash EEPROM cell needing only a 5 volt external source using an on-chip voltage multiplier circuit to provide high voltages necessary to effect Fowler-Nordheim tunneling during both the program and erase modes. Properties of dielectric layers between a floating gate and a control gate and between the floating gate and a drain region differ to facilitate programming and erasing of the floating gate. Also disclosed is a method for producing a flash EEPROM cell by forming the insulative layer between a floating gate and a control gate to have a capacitance lower than the capacitance of the insulating layer between the floating gate and a drain region.
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申请公布号 |
US5317179(A) |
申请公布日期 |
1994.05.31 |
申请号 |
US19910764019 |
申请日期 |
1991.09.23 |
申请人 |
INTEGRATED SILICON SOLUTION, INC. |
发明人 |
CHEN, LING;LIN, TIEN-LER;WU, ALBERT |
分类号 |
H01L21/336;H01L27/115;H01L29/788;(IPC1-7):H01L29/68;H01L29/78;H01L29/34 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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