High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays without a substrate

摘要

A high density surface emitting semiconductor LED array comprises disordered regions extending through a second contact layer, second confinement layer, an active layer and partially extending through a first confinement layer to define light emitting areas therebetween the disordered regions. Individual contacts on the second contact layer aligned with each emitting area inject current through the layers to a common contact on a first contact layer causing emission of light from the active layer through the surface of the exposed first contact layer. The second confinement layer can be replaced with a DBR to form an enhanced LED array. Both confinement layers can be replaced with DBRs to form a laser array. A refractive semiconductor layer, fresnel lenses or a micro lens array can be used to optically modify the surface emitted light. The semiconductor laser/light emitting diode arrays are fabricated without a substrate.