| 摘要 |
PURPOSE:To decrease leakage and also to improve pressure resistance by a process wherein an impurity density of the domain near the interface of a substrate sapphire and silicon near the source is strengthened and an impurity density of said domain near the drain is weakened. CONSTITUTION:In the drawing, 1: represents a source, 2: a drain, 3: a gate material, 4: a gate insulating film, 5: a substrate sapphire, 8: an active silicon domain. Then, 10 represents is a low density P-layer formed by compensation through introducing an n-type impurity from the drain domain. Pressure resistance can be improved by this low density portion. In addition, leak current can be decreased by a presence of the high density portion in the channel for leak current. |
