| 摘要 |
PURPOSE:To provide a photoelectromotive force element, which improves release voltage and the carrier range of positive holes by preventing the recoupling of photoexciting carriers, and a generation system using it. CONSTITUTION:In a photoelectromotive force element, which is constituted by stacking a p-type layer 104 consisting of silicon nonsingle crystalline semiconductor material, an i-type layer 103, and an n-type layer 102, the i-type layer 103 contains' germanium atoms, and the band gap of the i-type layer changes smoothly in the direction of thickness, and the minimum value of the band gap is positioned on the side of the p-type layer 104 from the center position of the i-type layer 103, and the i-type layer 103 is doped with a valence electron control agent to become a donor and a valence electron control agent to become an acceptor together. Moreover, at least either the p-type layer 104 or the n-type layer 102 is of laminate structure between a layer, which has group III elements and/or group V elements in periodic table for its main ingredients, and a layer, which contains valence electrons and has silicon atoms for its main ingredients. |
