| 摘要 |
PURPOSE:To provide a stacked DRAM of memory cell structure high in resistance to soft errors, wherein an ONO film as a capacitor insulating film is enhanced in reliability. CONSTITUTION:In a stacked DRAM memory cell, a charge storage node is of three-layered structure composed of an arsenic-doped polycrystalline silicon layer 10a as a lower layer, a phosphorus-doped polycrystalline layer 10b as an upper layer, and an insulating film 11 interposed between the polycrystalline silicon layers 10a and 10b. The polycrystalline silicon layers 10a and 10b are electrically connected together through the intermediary of a phosphorus-doped polycrystalline silicon side wall 13. |
