| 摘要 |
<p>PURPOSE:To make the active layer of an inverted stagger type TFT thicker in thickness and improve the characteristic controllability of the active layer. CONSTITUTION:In the title method in which a gate insulating film 3, a-Si active layer 4, n<+>-type a-Si layer 5, and metallic electrode layer 7 are successively formed on a heat resistant transparent substrate 1 after forming the pattern of a gate electrode 2 on the substrate 1 and a drain electrode 8 and source electrode 9 are formed by etching the layers 7 and 5 until the layer 4 is exposed, the electrodes 8 and 9 are formed by selectively etching the layer 7 until the layer 5 is exposed. In addition, the exposed layer 5 is formed to an insulating layer by performing anodic oxidation by using the electrodes 8 and 9 as anodes.</p> |
