| 摘要 |
<p>PURPOSE:To shorten inspection time by making the maximum repeating number of times of an automatic write-in operation/automatic erasure operation smaller than that of a normal operation at the time of an inspection in a nonvolatile semiconductor memory device capable of performing a write-in and a batch erasure electrically. CONSTITUTION:In a control circuit 7A, a counter 7a capable of counting the repeating number of times of the automatic write-in operation/automatic erasure operation of information to a prescribed maximum repeating number of times and a counter 7b capable of counting the number to less maximum number than the maximum number countable by the counter 7a are provided. Then, the automatic write-in operation /automatic erasure operation are performed by using the counter 7a at the time of the normal mode, and using the counter 7b at the time of the inspection mode.</p> |
