| 摘要 |
PURPOSE:To improve the luminance and life of an AlGaInN light emitting diode. CONSTITUTION:A 500Angstrom AlN buffer layer 2, high carrier concentration n<+>-layer 3, approx. 2.2mum in film thickness and 2X10<18>/cm<3> in electron, density, made of silicon-doped GaN, low carrier concentration n-layer 4, approx. 1.5mum and 1X10<16>/cm<3>, composed of non-doped GaN, low carrier concentration p-layer 51, approx. 0.5mum and 1X10<16>/cm<3> in hole density, made of Mg-doped GaN, and high carrier concentration p<+>-layer 52, approx. 0.2mum and 2X10<17>/cm<3> in hole density, are formed on a sapphire substrate 1 in this order. The n-layers is of double structure of the low carrier concentration n-layer 4 and high carrier concentration n<+>-layer 3 in the order from the one nearest the p-layer; the p-layers is also of double structure of the low carrier concentration p-layer 51 and high carrier concentration p<+>-layer 52 in the order from the one nearest the n-layers. As a result, the luminance and life are improved. |
