| 摘要 |
PURPOSE:To allow the use in the region of a short wave length by providing the sandwich structure where an active layer of a prescribed compound semiconductor is sandwiched by two clad layers consisting of prescribed compound semiconductors having lattice matching therewith while having a larger band gap than the active layer and being mutually different in a conductive type. CONSTITUTION:This semiconductor laser is provided with the sandwich structure, in which an active layer 4 consisting of a Ga1-a-b InaAlbN semiconductor is sandwiched by two clad layers 1, 5 consisting of a Ga1-a-b InaAlbN semiconductor having a larger band gap than the active layer while having almost lattice matching and being mutually different in the conductive types. Now, the following formulas are presumed to exsist: 0<=a<=1, 0<=b<=0.5, 0<=X<=1, 0<=Y<=. Further, Ga1-m-n InmAlnN semiconductor changes at least one of m and n by turns for having a constitution tilt construction for finally being made a semiconductor having the composition of Ga1-x-y InxAlyN, whereon the sandwich structure is formed. Further, m, n, x, y are to be in the range 0-1. |
