| 摘要 |
PURPOSE:To manufacture a semiconductor device possessed of a capacitor high in reliability and large in capacity. CONSTITUTION:A polycrystalline Si film 23 is worked into a memory node electrode pattern, and then a quick thermal nitrification process wherein a natural oxide film 24 formed on the memory node electrode pattern is quickly nitrified by heating into an oxide nitride film 25 and an etching process wherein the oxide nitride film 25 is etched with dilute hydrofluoric acid to be partially removed in a thicknesswise direction are repeatedly carried out. At this point, as the natural oxide film 24 is not exposed to air, it is prevented from growing again, and moreover a nitrification process and a removal process are repeatedly executed, so that the natural oxide film 24 is completely removed even if it is thick. |
