| 摘要 |
PURPOSE:To avoid the defectives such as disconnection, shortcircuit, etc., in the wiring formation steps by a method wherein ammonia or steam are added in the reflow atmosphere of a BPSG film. CONSTITUTION:An SiO2 film 102 is formed on a single crystalline substrate 101. Successively, after removing the SiO2 film 102 using fluoric acid water solution, a gate oxide film 103 is formed. Next, polycrystalline Si films are successively deposited to be successively etched away to form a gate electrode 104. Later, diffused layers 106a, 106b are formed using the gate electrode 104 as a mask. Next. a thermal nitride film 113 is formed on the surface of an accumulation electrode 112. Next, a plate electrode 114 is formed to deposit an SiO2 film 115 and then a BPSG film 116a is made reflow in ammonia and steam atmosphere so as to form another BPSG film 116b containing nitrogen. Accordingly, the yield of the wiring steps can be increased. |
