| 摘要 |
PURPOSE:To enable a fine pattern to be accurately formed by a method wherein a memory cell and a peripheral circuit are lessened in level difference between them. CONSTITUTION:A photoresist film 23 is selectively formed on a P<->-type semiconductor substrate 1 of single crystal silicon other than a memory cell region, the semiconductor substrate 1 is subjected to wet etching using the photoresist film 23 as a mask for the formation of a recess. As mentioned above, the semiconductor substrate 1 is selectively removed form recesses and projections through such a wet etching method that no crystal defect is produced, a memory cell is provided to the recess, and a peripheral circuit is formed on the projection, whereby the memory cell and the peripheral circuit are lessened in level difference between them, and an accurate semiconductor memory of fine pattern is formed. |
