| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor device provided with intersecting connections such as an SRAM, wherein either a source region or a drain region and a valid contact region of a MOS transistor are surely and electrically connected together producing no level difference between them. CONSTITUTION:A valid contact region 6 is formed on a silicon substrate 1, a connection wiring 8 is formed on the valid contact region 6 partially overlapping a gate insulating film 3, an impurity region 10 of the same conductivity type with the valid contact region 6 is provided to the silicon substrate 1 wider than the overlap, and a source region 11 is formed in the silicon substrate 1 as joined to the impurity region 10. |
