| 摘要 |
PURPOSE:To provide a semiconductor memory device which is prevented from deteriorating in soft error resistance, wherein an access transistor is restrained from deteriorating in characteristics, a capacitor dielectric film is prevented from deteriorating in quality, and the lower electrode of a stacked capacitor is lessened in contact resistance. CONSTITUTION:In a semiconductor memory device called a stacked capacitor DRAM, an arsenic-doped polycrystalline Si film 30 in contact with the one diffusion region 15 of an access transistor 23, a phosphorus-doped polycrystalline Si film 32 formed on the film 30, and an SiO2 film 31 formed at least, on a part of the polycrystalline Si film 30 so as to prevent phosphorus from diffusing into the polycrystalline Si film 30 and the diffusion region 15 are provided. Si films 30 and 32 are made to serve a lower electrode of a stacked capacitor 23. |
