| 摘要 |
PURPOSE:To obtain a SRAM capable of suppressing the delay of a signal caused by a voltage drop in a data line. CONSTITUTION:This SRAM is provided with a current clamping circuit 7 connected to one end of the local sense amplifier 2 side of a data line pair DL, /DL. When one data line DL is on a high level, the current clasping circuit 7 causes a current IB having a prescribed value to flow through a transistor M2 on the primary side of a second current mirror circuit 6 and the current IB having the prescribed value is caused to flow into the other data line /DL from a transistor M1 on the secondary side of the second current mirror circuit 6. On the other hand, when the data line /DL is on a high level, the current IB having a prescribed value is caused to flow through a transistor M3 on the primary side of a first current mirror circuit 5 and the current IB having the prescribed value is caused to flow into one data line DL from a transistor M4 on the secondary side of the first current mirror circuit 5. |
