| 摘要 |
<p>PURPOSE:To provide a thin film transistor circuit having excellent characteristics with a smaller area and a method for the manufacture thereof. CONSTITUTION:A thin film transistor circuit, composed of a driving thin film transistor and load resistance, is formed as a NOT circuit on a substrate 101. The driving thin film transistor is provided with a gate electrode 102, gate insulating film 103, channel 107, and n<+> silicon conductor layer 108 composed of electrodes for output and ground, respectively. An n<-> silicon semiconductor layer 103 is formed as a load resistance, and an n<+> silicon semiconductor layer 104 as an electrode for power supply. Subjecting an amorphous silicon semiconductor layer to ion shower doping forms an n<-> silicon semiconductor layer 103 having a high sheet resistivity with accuracy. This reduces the area and power consumption of a circuit.</p> |
