| 摘要 |
<p>PURPOSE: To form a low contamination working surface for the work of a semiconductor quality silicon by a method, wherein the working surface is composed of silicon devices arranged in parallel with each other, so as to make a flat surface and supported by supporters which can adjust freely the positions of the devices. CONSTITUTION: In order to avoid the contamination of a semiconductor quality silicon which is caused by a working surface, the processing surface is made of suitable or higher purity silicon. The processing surface is composed of silicon devices 1, which are arranged in parallel with each other so as to form a flat surface. Supporters 2 of the silicon devices can be adjusted freely. That is, the supporters 2 have a means by which gaps are formed between the silicon devices 1 and can be changed and maintained. By the exsistence of the gaps, the powder and small fragments of the semiconductor silicon can be made to fall from the processing surface into a collection vessel 7 which is placed beneath the surface through the gaps. Therefore, the working surface can be a low contamination working surface.</p> |
