| 摘要 |
A method of providing electrical contact between a gate of a transistor device and an active area remote of the transistor device includes: a) providing a first layer of a conductivity capable material over a gate insulative layer; b) etching the first layer and gate layer to expose a contact area; c) providing a second layer of a second material over the contact area and first layer; d) etching the second layer selectively relative to the first material and the substrate to provide a pair of buried contact spacers over respective opposing edges of the first layer in the contact area, and to reexpose a portion of the contact area and the first layer; e) providing a third layer of a conductivity capable material over the first layer, the buried contact spacers and the exposed portion of the contact area; f) etching the first and third layers to define a transistor gate of one device and a transistor gate of another device, and to interconnect the transistor gate of the another device to the portion of the contact area with the third layer material, and to define an exposed region adjacent both the one gate and one of the buried contact spacers; h) providing insulative spacers about edges of the transistor gates; i) providing a conductivity enhancing impurity implant into the substrate through the exposed region; j) rendering the portion of the contact area within the substrate electrically conductive; and k) rendering substrate beneath the one buried contact spacer electrically conductive to electrically interconnect the portion of the contact area within the substrate to the conductivity enhancing impurity implanted region of the substrate.
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