| 摘要 |
PURPOSE:To provide the reloadable memory medium which does not change with lapse of time and has stable and high reliability by controlling the quantity of the oxygen included in an oxide and recording information by in such a manner that large and small state changes of the oxygen content in the oxide correspond to signals; CONSTITUTION:An Ag electrode 2 is deposited by evaporation on an MgO single crystal substrate 1 and a recording medium 3 consisting of the YSr2Cu2.8 W0.2O6.8 oxide is deposited by evaporation thereon. Ruggedness is formed at 0.5mum intervals on the medium 3 and the size of the ruggedness is specified to about >=3nm. An acicular electrode 4 is moved to the projecting parts of the medium 3 obtd. in such a manner and a voltage is applied between terminals 5 and 6. The medium remains in a high-resistance state up to 4V but current begins to flow out and the medium attains the low-resistance state when the voltage rises higher than this value. The cause thereof lies in that the oxygen is absorbed from the inside of the atmosphere and the electric resistance of the medium decreases as the temp. of the medium is partially increased by applying the voltage. Namely, voltage-current characteristics are obtd. with good reproducibility and the stable storage of input information is possible. |
