| 摘要 |
PURPOSE:To lessen the surface of an interlayer insulating film in level difference so as to enable a fine pattern to be formed by a method wherein a dielectric film formed on a region where a conductor layer is arranged high in density is removed by a prescribed thickness. CONSTITUTION:A first interlayer insulating film 7 is deposited, and its surface is flattened. Keeping a peripheral circuit region I masked, the surface of the first interlayer insulating film 7 located on a memory cell array region II is removed. a charge storage electrode 10, a capacitor insulating film 11, and a cell counter electrode 12 are deposited on the region II, and a second interlayer insulating film 13 is deposited and then flattened. Keeping the region I masked, the surface of the second interlayer insulating film 13 located on the region II is removed. Next, after a bit line 16 is provided, a third interlayer insulating film 17 is deposited and flattened. Keeping the region I masked, the surface of the third interlayer insulating film 17 located on the region II is removed. Lastly, a contact hole 19 and an Al wiring layer 20 are provided. |
