| 摘要 |
PURPOSE:To provide a semiconductor device manufacturing method, wherein a fine isolated pattern of high resolution is formed through an exposure process through which a separate pattern such as a contact hole is formed. CONSTITUTION:An exposure process is provided, wherein a reticle 6A is irradiated with illuminating light transmitted through a light source diaphragm 3 with an angle larger than the numerical number of a projecting lens 7, and the illuminating light successively transmitted through the reticle 6A and the projecting lens 7 are made to irradiate a photoresist 9. Furthermore, reticles 6A and 6b are replaced at least once, an exposure process is additionally carried out, and a process wherein a resolvable latent image P0 is formed on the edge overlap of patterns PA1, PA2, PB1, and PB2 formed on the reticles 6A and 6B and another process wherein the latent image P0 of the photoresist 9 is turned into an actual image by developing solution are provided. |
