发明名称 |
Method for making a silicon field emission device |
摘要 |
This invention discloses a method for making a silicon field emission device which ensures in the higher electron emission effect at the same voltage required for field emission by shrinking the diameter of a gate aperture to make the field emission structure sharp. The shrinkage effect of the gate aperture of about 42-45% may be achieved in accordance with this invention.
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申请公布号 |
US5316511(A) |
申请公布日期 |
1994.05.31 |
申请号 |
US19930025094 |
申请日期 |
1993.03.02 |
申请人 |
SAMSUNG ELECTRON DEVICES CO., LTD. |
发明人 |
LEE, KANGOK |
分类号 |
H01J1/304;H01J9/02;H01J31/12;(IPC1-7):H01J9/02 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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