SEMICONDUCTOR INTEGRATED CIRCUIT PACKAGE, ITS MANUFACTURE, AND ITS MOUNTING METHOD

摘要

PURPOSE:To enable the manufacture of an IC suitable for a high frequency circuit and a high-speed switching circuit. CONSTITUTION:An external lead electrode (S1-S5) is formed, using a photolithography technique in wafer process, and then resin is applied on a wafer, keeping it in wafer condition, and then it is cured (S7 and S8), and the surface of the wafer is polished (S9) so as to form an electrode constituted of a cleaned external lead electrode 18, and this wafer is diced and sliced and cut (S12) and expanded (S13), thus an IC, which has a protective package having resin for a package and a polished electrode on the wafer, is made. Hereby, IC packaging process is executed in wafer condition, so it can be badge-processed, and productivity can be improved, thus it has an effect of getting a highly accurate object at low cost.