| 摘要 |
A method and apparatus involving the use of a thickness measurement probe (20) having a predetermined resolution to measure the thickness of a wafer (18) over a two-dimensional area of the wafer (18), the method including sampling the measured thickness of the wafer (18) with the probe to generate an image of the two-dimensional area of the wafer (18), the image being a two-dimensional array of measurements, each measurement representing a measurement of the thickness of a different region of the two-dimensional area, the two-dimensional array of measurements being represented by a measured column tensor; and left multiplying the measured column tensor by a reconstruction tensor T to obtain an estimate of a desired measurement column tensor, where reconstruction tensor T is equal to RdmRmm<-1>, Rdm being a cross-variance tensor computed for d &cir& _, a desired measurement column tensor, and m &cir& _, the measured column tensor, and the Rmm being an auto-covariance tensor computed for m &cir& _, and wherein the estimate of a desired measurement column tensor represents an estimate of measurements that would be obtained from a hypothetical probe assembly having a different resolution from the first mentioned probe (20). |
