| 摘要 |
<p>In a lead frame adapted to be used for a semiconductor device, a plurality of inner leads (18) are made of a thin conductive material for easily forming a fine pattern of the inner leads. A plurality of outer leads (20) are integrally formed with the respective inner leads. The outer leads are coated with metal layers to increase the thickness thereof, so that a desired strength of the outer leads is obtained. A semiconductor chip (24) is electrically connected to the inner leads. The semiconductor chip and a part of the lead frame including the inner leads are hermetically sealed with a resin (26) and, thus, a semiconductor device is obtained.</p> |
