| 摘要 |
<p>PURPOSE:To integrate light emitting and light receiving and to miniaturize the device by providing a light-emitting portion and a light-receiving portion on the same semiconductor sybstrate with a distance being provided between both portions. CONSTITUTION:An n-type GaAs0.62P0.38 layer 2 which indicates direct transition is epitaxially grown on an n-type GaAs semiconductor substrate 1. The epitaxial layer 2 is covered by a mask, and a Zn diffusion layer 3 is formed to make an LED. Then, the masked portion covering a light-receiving portion which is separated from a light-emitting portion on the same semiconductor substrate is etched out, and Zn is diffused into the light-receiving portion 4, thereby a light-receiving diode is formed. In order to minimize the reception of the light that is emitted by the light-emitting portion, transmitted through the semiconductor, and reached the light-receiving portion, the semiconductor material around the LED or light-receiving diode is etched out and a mesa portion is formed. A non-transparent screening film 5 is formed at the mesa-etched portion.</p> |
