Semiconductor device and method of manufacturing the same.

摘要

A semiconductor device such as a semiconductor acceleration sensor of an electrostatic capacity type and a method of manufacturing the same are disclosed, wherein a silicon layer (10) is bonded to first and second glass layers (12 and 11) by means of an anodic bonding process in such a manner as to be positioned between the first and second glass layers (12 and 11). The first glass layer (12) has an overhung portion protruded from an edge of the second glass layer (11). At least an interconnection (21, 22 or 26) is formed between the silicon layer (10) and the first glass layer (12) and has a bonding pad (18, 19 or 20) positioned on the inner surface of the overhung portion of the first glass layer (12). Before the anodic bonding process, an anodic-bonding-inhibition-layer (36) such as aluminum layer is positioned between a second glass wafer (31) forming the second glass layer (11) and a silicon wafer (10) forming the silicon layer (10), and faces to a predetermined portion of a first glass wafer (32) forming the first glass layer (12). The predetermined portion of the first glass wafer (32) is to be the overhung portion of the first glass layer (12). During a dicing process after the anodic bonding process, the second glass wafer (31) is cut along the configuration of the anodic-bonding-inhibition-layer (36), thereby removing an unnecessary portion of the second glass wafer (31) facing to the overhung portion of the first glass layer (12) from the remaining portions of the second glass wafer (31).