| 摘要 |
A semiconductor growth process wherein a plurality of layers each consisting of a different kind of semiconductor material are grown comprises the steps of: heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started, supplying a first material gas to the surface of said substrate to cause a growth of said first semiconductor layer, lowering the temperature of said substrate to below said first growth starting temperature, and at the same time, stopping the supply of said first material gas, to stop the growth of said first semiconductor layer, heating said substrate to a second growth starting temperature at which a growth of a second semiconductor layer can be started, and supplying a second material gas to the surface of said substrate to cause a growth of said semiconductor layer. |
