| 发明名称 |
Semiconductor device having a polysilicon capacitor with large grain diameter |
| 摘要 |
A semiconductor device includes a capacitor with an insulator having an improved durability. In the semiconductor device, a capacitor lower electrode 11 of the cylindrical capacitor includes a standing wall portion 11b which is formed of a polysilicon layer having a large crystal grain diameter (1000 ANGSTROM -10000 ANGSTROM ).
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| 申请公布号 |
US5315140(A) |
申请公布日期 |
1994.05.24 |
| 申请号 |
US19930008020 |
申请日期 |
1993.01.22 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SUGAHARA, KAZUYUKI;ARIMA, HIDEAKI |
| 分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/16;H01L29/94;(IPC1-7):H01L29/94 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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