发明名称 Strained layer Fabry-Perot device
摘要 An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.
申请公布号 US5315430(A) 申请公布日期 1994.05.24
申请号 US19920869269 申请日期 1992.04.15
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 BRENNAN, THOMAS M.;FRITZ, IAN J.;HAMMONS, BURRELL E.
分类号 G02F1/017;G02F1/21;(IPC1-7):G02F1/03;G02B5/28;G02B27/00 主分类号 G02F1/017
代理机构 代理人
主权项
地址