Method for making a semiconductor laser

摘要

Disclosed is a method for manufacturing a vertical cavity, surface-emitting laser. The method includes growing a distributed Bragg reflector having at least 10 layers of alternating composition on a gallium arsenide substrate. The growth surface of the substrate is tilted by an angle of 1 DEG -7 DEG from the orientation of a (100) surface toward the orientation of a (111)A surface. This results in improved reflectivity of the DBR.