| 摘要 |
A method of dicing a wafer of III-V compound material without causing chipping and cracks. The method includes the steps of forming a scribe line on a surface of the wafer orthogonal to a crystal plane (011) by means of a scribing method, forming a groove in the semiconductor wafer in parallel to the crystal plane (011) by means of a grinding-cutting method, and breaking the semiconductor wafer along the scribe line and the groove.
|
