发明名称 |
Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device |
摘要 |
PCT No. PCT/JP92/00468 Sec. 371 Date Dec. 22, 1992 Sec. 102(e) Date Dec. 22, 1992 PCT Filed Apr. 14, 1992.An apparatus and method for manufacturing a semiconductor device capable of forming a single layer film or a multilayer film of improved quality by continuously processing without exposure of the wafer to the ambient air. The apparatus includes a film forming section having a gas dispersion unit for supplying reaction gas, a processing section for processing the formed film and a wafer holder for holding a wafer facing the gas dispersion unit or the processing section. The wafer holder moves the wafer between the film forming section and the processing section while heating the wafer by a heating element contained therein.
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申请公布号 |
US5314538(A) |
申请公布日期 |
1994.05.24 |
申请号 |
US19920958105 |
申请日期 |
1992.12.22 |
申请人 |
SEMICONDUCTOR PROCESS LABORATORY;CANON SALES CO., INC.;ALCAN TECH CO., INC. |
发明人 |
MAEDA, KAZUO;TOKUMASU, NOBORU;NISHIMOTO, YUHKO |
分类号 |
H01L21/205;C23C16/48;C23C16/54;C23C16/56;H01L21/00;H01L21/3105;H01L21/316;H01L21/324;H01L21/677;H01L21/683;H01L21/768;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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