| 摘要 |
PURPOSE:To provide a laminated silicon element in which a polycrystalline silicon film is hardly peeled off from a carbon system substrate and, further, an ohmic junction between the substrate and the polycrystalline silicon film can be formed. CONSTITUTION:A laminated silicon element 20 is composed of a carbon fiber woven cloth 21, an intermediate film 22 which is made of SiC containing phosphorus which is n-type dopant and which is formed over the whole surface of the woven cloth 21 and a polycrystalline silicon film 23 formed on the intermediate film 22. The film stress of the polycrystalline silicon film 23 can be reduced by the effect of the intermediate film 22 containing phosphorus. Further, an ohmic junction between the woven cloth 21 and the polycrystalline silicon film 23 can be obtained and the electrical resistance of the intermediate film 22 can be reduced. Moreover, as a field is formed in the polycrystalline silicon film 23, a BSF effect can be also obtained. Therefore, if this laminated silicon element 20 is applied to a BSF type solar cell, etc., its photoelectric conversion efficiency can be improved and, further, as the silicon film is hardly peeled off, its physical strength can be improved. |
